Транзистор: N-MOSFET; 75В; 420А; 600Вт; DE475 Технические параметры
- Case: DE475
- Channel kind: enhanced
- Drain current: 420A
- Drain-source voltage: 75V
- Features of semiconductor devices: thrench gate power mosfet
- Gate charge: 545нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 0.0016Ω
- Power dissipation: 600W
- Type of transistor: N-MOSFET
