Оптрон; SMD; Каналы:2; Вых: транзисторный; Uизол:5,3кВ; Uce:70В Технические параметры
- Case: SO8
- Collector Current Max.: 150mA
- Collector-Emitter Saturation Voltage Max.: 400mV
- Collector-emitter voltage: 70V
- Collector-Emitter Voltage (VCEO) Max.: 70V
- CTR@If: 100-200%10mA
- Current Transfer Ratio (CTR) Max.: 200%
- Current Transfer Ratio (CTR) Min.: 100%
- Emitter−Collector Voltage (VECO) Max.: 7V
- Forward Current (If) Max.: 60mA
- Forward Voltage (Vf) Max.: 1.5V
- Housing: SO8
- Insulation voltage: 5.3kV
- Isolation Voltage: 2.5kV
- Manufacturer: ON SEMICONDUCTOR
- Mount: SMD
- Mounting: SMD
- Number of channels: 2
- Operating Temperature Max.: 100°C
- Operating Temperature Min.: -40°C
- Output type: transistor
- Outputs: 2
- Package Type: SOIC-8
- Power Dissipation (Pd): 150mW
- Reverse Voltage (Vr): 6V
- Sensor Output: Phototransistor
- Turn-off time: 2.8µs
- Turn-on time: 3µs
- Type of semiconductor component: оптрон
- Напряжение коллектор-эмиттер: 70V
- Тип выхода: транзисторный