Технические параметры
- Case: DIP8
- CTR@If: 500%1.6mA
- Current Transfer Ratio (CTR) Min.: 500%
- Forward Current (If) Max.: 20mA
- Forward Voltage (Vf) Max.: 1.75V
- Housing: DIP8
- Isolation Voltage: 2.5kV
- Manufacturer: ON SEMICONDUCTOR
- Mount: THT
- Mounting: THT
- Number of channels: 2
- Operating Temperature Max.: 85°C
- Operating Temperature Min.: -40°C
- Output Type: Photodarlington
- Output type: Darlington
- Outputs: 2
- Package Type: DIP-8
- Power Dissipation (Pd): 100mW
- Pulse voltage max.: 2.5кВ/мкс
- Reverse Voltage (Vr): 5V
- Ripple & Noise (%): -999
- Transfer rate: 100кбит/с
- Transmission: 100кбит/с
- Turn-off time: 35µs
- Turn-on time: 20µs
- Type of semiconductor component: оптрон
- Импульсное напряжение макс.: 2.5кВ/мкс
- Тип выхода: схема Дарлингтона