Оптрон; THT; Каналы:1; Вых: транзисторный; Uизол:6кВ; Uce:90В; DIP6 Технические параметры
- Case: DIP6
- Collector Current Max.: 50mA
- Collector-Emitter Saturation Voltage Max.: 0.3V
- Collector-emitter voltage: 90V
- Collector-Emitter Voltage (VCEO) Max.: 70V
- CTR@If: 16-32%10mA
- Current Transfer Ratio (CTR) Max.: 320%
- Current Transfer Ratio (CTR) Min.: 160%
- Emitter−Collector Voltage (VECO) Max.: 7V
- Forward Current (If) Max.: 60mA
- Forward Voltage (Vf) Max.: 1.6V
- Housing: DIP6
- Insulation voltage: 6kV
- Isolation Voltage: 5kV
- Manufacturer: Vishay
- Mount: THT
- Mounting: THT
- Number of channels: 1
- Operating Temperature Max.: 110°C
- Operating Temperature Min.: -55°C
- Output type: transistor
- Outputs: 2
- Package Type: DIP-6
- Power Dissipation (Pd): 70mW
- Reverse Voltage (Vr): 5V
- Sensor Output: Phototransistor
- Turn-off time: 5µs
- Turn-on time: 7µs
- Type of semiconductor component: оптрон
- Напряжение коллектор-эмиттер: 90V
- Тип выхода: транзисторный
