Микросхема RTC; I2C; SRAM; 64Б; 1,8?5,5ВDC; SO8 Технические параметры
- Battery Backup Switching Max.: 5.5V
- Battery Backup Switching Min.: 1.3V
- Clock format: HH:MM:SS (12/24h)
- Contacts: 8
- Date format: YY-MM-DD-dd
- Date Format: YY-MM-DD
- DC supplying current: 400µA
- Frequency: 400kHz
- Height: 1.25mm
- Housing: SO8
- Integrated circuit type: микросхема RTC
- Interface: I2C
- Interfaces: I²C 2-Wire Serial
- Kind of memory: SRAM
- Length: 4.9mm
- Manufacturer: Microchip
- Memory capacity: 64Б
- Memory Size: 1КБайт
- Mount: SMD
- Mounting Type: SMD
- Operating Temperature Max.: 85°C
- Operating Temperature Min.: -40°C
- Output voltage: -0.6...7.5В
- Package Type: SOIC
- Packaging: Tape & Reel
- Supply Voltage Max.: 5.5V
- Supply Voltage Min.: 1.8V
- Time Format: HH:MM:SS (12/24 hr)
- Time keeping current: 700nA
- Voltage supply: 1.8...5.5В DC
- Width: 3.9mm
- Характерные особенности: EEPROM
