Технические параметры
- Case: SuperSOT-6
- Channel kind: enhanced
- Drain current: -3A
- Drain-source voltage: -60V
- Features of semiconductor devices: logic level
- Gate charge: 24нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 190mΩ
- Polarisation: unipolar
- Power dissipation: 1.6W
- Technology: PowerTrench®
- Type of transistor: P-MOSFET
