Тиристорный модуль; 1,6кВ; 400А; SOT227B Технические параметры
- Case: SOT227B
- Current It(av): 30A
- Electrical mounting: screwed
- Forward current: 25A
- Forward Voltage (Vf): 1.28V
- Forward voltage max.: 1.57V
- Gate current: 100mA
- Gate Trigger Current (Igt): 100mA
- Gate Trigger Voltage (Vgt): 1.5V
- Height Units: 4
- Housing: SOT227B
- Insulation Voltage: 3kV
- Load current: 25A
- Manufacturer: IXYS
- Max. forward impulse current: 430A
- Module type: thyristor
- Mount: винтами
- Mounting: screwed
- Mounting Type: SMD
- Off state voltage max.: 1.6kV
- ON State RMS Current (It(rms)): 66A
- Operating Temperature Max.: 125°C
- Operating Temperature Min.: -40°C
- Package Type: SOT-227B
- Packaging: Tube
- Peak Non-Repetitive Surge Current (Itsm): 400A
- Peak Repetitive Off-State Voltage (Vdrm): 1.6kV
- Semiconductor structure: thyristor/thyristor
- Type of semiconductor component: тиристорный модуль
- Прямой ток макс.: 400A