Модуль: тиристорный; 1,8кВ; винтами; BG-PB70AT-1; 250мА; винтами Технические параметры
- Case: BG-PB70AT-1
- Electrical mounting: винтами
- Forward current: 1.5kA
- Forward voltage max.: 1.51V
- Gate current: 250mA
- Housing: BG-PB70AT-1
- Load current: 1.5kA
- Manufacturer: Infineon
- Max. forward impulse current: 35kA
- Max. forward voltage: 1.51V
- Modular: тиристорный
- Module type: thyristor
- Mount: винтами
- Mounting: screwed
- Off state voltage max.: 1.8kV
- Semiconductor structure: одиночный симистор