Модуль: IGBT; 1,7кВ; 80А; D61,SEMITRANS2 Технические параметры
- Case: SEMITRANS2
- Collector current: 55A
- Electrical mounting: screwed
- Gate - emitter voltage: 20V
- Housing: SEMITRANS2
- Manufacturer: SEMIKRON
- Max. forward impulse current: 100A
- Module type: IGBT
- Mount: винтами
- Mounting: screwed
- Off state voltage max.: 1.7kV
- Operating temperature: -40...125°C
- Pulsed collector current: 100A
- Semiconductor structure: transistor/transistor
- Topology: IGBT half-bridge
- Transistor type: IGBT
- Turn-off time: 590ns
- Turn-on time: 210ns
- Variant: D61
- Напряжение коллектор-эмиттер: 1.7kV
- Напряжение насыщения коллектор-эмиттер: 2V