Модуль: IGBT; 600В; D61,SEMITRANS2; на провод Технические параметры
- Case: SEMITRANS2
- Collector current: 75A
- Electrical mounting: screwed
- Gate - emitter voltage: 20V
- Housing: SEMITRANS2
- Manufacturer: SEMIKRON
- Max. forward impulse current: 150A
- Module type: IGBT
- Mount: винтами
- Mounting: screwed
- Off state voltage max.: 600V
- Operating temperature: -40...125°C
- Semiconductor structure: diode/transistor
- Topology: IGBT half-bridge
- Transistor type: IGBT
- Variant: D61
- Напряжение коллектор-эмиттер: 600V