Модуль: IGBT; 1,2кВ; 300А; D59,SEMITRANS4 Технические параметры
- Case: SEMITRANS4
- Collector current: 324A
- Electrical mounting: screwed
- Gate - emitter voltage: 20V
- Housing: SEMITRANS4
- Manufacturer: SEMIKRON
- Max. forward impulse current: 900A
- Module type: IGBT
- Mounting: screwed
- Off state voltage max.: 1.2kV
- Operating temperature: -40...125°C
- Topology: single transistor
- Transistor type: IGBT
- Variant: D59
- Напряжение коллектор-эмиттер: 1.2kV
