Модуль: IGBT; 1,2кВ; 35А; SEMITOP2,T2 Технические параметры
- Application: Inverter
- Case: SEMITOP2
- Collector current: 35A
- Electrical mounting: soldered
- Gate - emitter voltage: 20V
- Housing: SEMITOP2
- Manufacturer: SEMIKRON
- Max. forward impulse current: 105A
- Module type: IGBT
- Mounting: screwed
- Off state voltage max.: 1.2kV
- Operating temperature: -40...125°C
- Semiconductor structure: diode/transistor
- Topology: 3-phase rectifier
- Transistor type: IGBT
- Variant: T2
- Напряжение коллектор-эмиттер: 1.2kV