Транзистор: IGBT; 600В; 320А; 735Вт; SOT227B Технические параметры
- Case: SOT227B
- Collector current: 320A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1.3V
- Collector-Emitter Voltage (Vceo): 600V
- Continuous Collector Current (Ic): 320A
- Electrical mounting: screwed
- Emitter Leakage Current: 400nA
- Gate - emitter voltage: 20V
- Gate Emitter Voltage (Vge): 20V
- Height Units: 4
- Housing: SOT227B
- Manufacturer: IXYS
- Max. forward impulse current: 1.2kA
- Module type: IGBT
- Mounting: screwed
- Mounting Type: SMD
- Off state voltage max.: 600V
- Operating temperature: -55...150°C
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-227B
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 735W
- Reflow Temperature Max.: 260°C
- Topology: single transistor
- Transistor type: IGBT
- Мощность: 735W
- Напряжение коллектор-эмиттер: 600V
