Транзистор: N-MOSFET Технические параметры
- Case: MAX247
- Channel kind: enhanced
- Drain current: 37.8A
- Drain-source voltage: 600V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±30V
- Manufacturer: STM
- Mounting: THT
- On-State Resistance: 55mΩ
- Polarisation: unipolar
- Power dissipation: 460W
- Pulsed drain current: 60A
- Type of transistor: N-MOSFET