Транзистор: N-MOSFET; полевой; 900В; 5А; 160Вт; TO247-3 Технические параметры
- Case: TO247-3
- Continuous Drain Current (Id): 8A
- Drain current: 5A
- Drain-source voltage: 900V
- Drain-Source Voltage (Vds): 900V
- Fall Time: 28ns
- Gate-Source Voltage: 30V
- Gate-source voltage: ±30V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 1.1Ω
- On-State Resistance: 1300mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-247
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 160W
- Power Dissipation (Pd): 160W
- Rise Time: 13ns
- Technology: MDmesh™
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 55ns
- Turn-ON Delay Time: 22ns
- Type of transistor: N-MOSFET