Транзистор: N-MOSFET; полевой; 600В; 12,6А; 140Вт; TO220-3 Технические параметры
- Case: TO220-3
- Continuous Drain Current (Id): 20A
- Drain current: 12.6A
- Drain-source voltage: 600V
- Drain-Source Voltage (Vds): 600V
- Fall Time: 50ns
- Gate-source voltage: ±30V
- Gate-Source Voltage: 30V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 135mΩ
- On-State Resistance: 135mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220AB
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 140W
- Power Dissipation (Pd): 140W
- Rise Time: 25ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 85ns
- Turn-ON Delay Time: 25ns
- Type of transistor: N-MOSFET