Транзистор: N-MOSFET Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 3.1A
- Drain-source voltage: 650V
- Gate charge: 18нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- On-State Resistance: 1Ω
- Polarisation: unipolar
- Power dissipation: 96W
- Pulsed drain current: 20A
- Technology: MDmesh™
- Type of transistor: N-MOSFET