Технические параметры
- Case: SP4
- Drain current: 34A
- Drain-source voltage: 500V
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 90mΩ
- Power dissipation: 357W
- Pulsed drain current: 184A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: NTC thermistor