Технические параметры
- Case: SP4
- Collector current: 50A
- Electrical mounting: soldering
- Gate - emitter voltage: ±20V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.7kV
- Pulsed collector current: 100A
- Semiconductor structure: diode/transistor
- Technology: Trench
- Topology: NTC thermistor