Urmax:1,2кВ; Ic:150А; P:660Вт; SOT227B; винтами; винтами Семейство Биполярные транзисторы с изолированным затвором Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.7V
- Collector-Emitter Voltage (Vceo): 1.2kV
- Continuous Collector Current (Ic): 150A
- Emitter Leakage Current: 500nA
- Gate Emitter Voltage (Vge): 20V
- Height Units: 4
- Manufacturer: IXYS
- Mounting Type: SMD
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -40°C
- Package Type: SOT-227B
- Phases: Single
- Power Dissipation (Pd): 650W
