Модуль: IGBT; транзистор/транзистор; полумост IGBT; Urmax: 4,5кВ Технические параметры
- Case: HIPAK
- Collector current: 150A
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: ABB
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 4.5kV
- Pulsed collector current: 300A
- Semiconductor structure: transistor/transistor
- Topology: IGBT half-bridge