Модуль: IGBT; транзистор/транзистор,общий вход,общий эмиттер Технические параметры
- Case: HIPAK
- Collector current: 1.8kA
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: ABB
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 3.3kV
- Pulsed collector current: 3.6kA
- Semiconductor structure: transistor/transistor
- Topology: IGBT half-bridge x3