Модуль: IGBT; диод/транзистор; boost chopper; Urmax: 1,2кВ; Ic: 50А Технические параметры
- Manufacturer: Vishay
- Topology: boost chopper
- Technology: HEXFRED®
- Collector current: 50A
- Module type: IGBT
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 1.2kV
- Semiconductor structure: diode/transistor
- Pulsed collector current: 150A
- Mounting: screw
- Case: SOT227B