Модуль: IGBT; диод/транзистор; 3-фазный диодно-тиристорный мост Технические параметры
- Application: Inverter
- Case: E2-Pack
- Collector current: 84A
- Electrical mounting: Press-in PCB
- Gate - emitter voltage: ±20V
- Manufacturer: IXYS
- Module type: IGBT
- Mounting: screw
- Off state voltage max.: 1.2kV
- Power dissipation: 390W
- Pulsed collector current: 225A
- Semiconductor structure: diode/transistor
- Topology: NTC thermistor