Модуль: IGBT; диод/транзистор; 3-фазный диодный мост; Ic: 175А Технические параметры
- Application: Inverter
- Case: V2-Pack
- Collector current: 175A
- Electrical mounting: Press-in PCB
- Gate - emitter voltage: ±20V
- Manufacturer: IXYS
- Module type: IGBT
- Mounting: screw
- Off state voltage max.: 1.2kV
- Power dissipation: 695W
- Pulsed collector current: 450A
- Semiconductor structure: diode/transistor
- Technology: X2PT
- Topology: three-phase diode bridge