Модуль: IGBT; диод/транзистор; 3-фазный диодный мост; Ic: 80А Технические параметры
- Application: Inverter
- Case: E2-Pack
- Collector current: 80A
- Electrical mounting: Press-in PCB
- Gate - emitter voltage: ±20V
- Manufacturer: IXYS
- Module type: IGBT
- Mounting: screw
- Off state voltage max.: 1.7kV
- Power dissipation: 445W
- Pulsed collector current: 150A
- Semiconductor structure: diode/transistor
- Topology: three-phase diode bridge