Ic: 65А; SOT227B; винтами; винтами; 350Вт; XPT™ Технические параметры
- Case: SOT227B
- Collector current: 65A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.1V
- Collector-emitter voltage: 1.2kV
- Collector-Emitter Voltage (Vceo): 1.2kV
- Continuous Collector Current (Ic): 100A
- Electrical mounting: screw
- Emitter Leakage Current: 500nA
- Features of semiconductor devices: high voltage
- Gate - emitter voltage: ±20V
- Gate Emitter Voltage (Vge): 20V
- Height Units: 4
- Manufacturer: IXYS
- Module type: IGBT
- Mounting: screw
- Mounting Type: SMD
- Operating Temperature Max.: 125°C
- Operating Temperature Min.: -40°C
- Package Type: SOT-227B
- Packaging: Tube
- Phases: Single
- Power dissipation: 350W
- Power Dissipation (Pd): 350W
- Pulsed collector current: 150A
- Reflow Temperature Max.: 260°C
- Semiconductor structure: single transistor
- Technology: XPT™
