Технические параметры
- Case: SP6C
- Collector current: 150A
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 480A
- Semiconductor structure: transistor/transistor
- Technology: Trench
- Topology: H-bridge