Модуль: IGBT; 775А; SEMITRANS4; 1,7кВ; винтами; Ifsm:3420А Технические параметры
- Case: SEMITRANS4
- Collector current: 775A
- Electrical mounting: винтами
- Gate - emitter voltage: ±20В
- Housing: SEMITRANS4
- Manufacturer: SEMIKRON
- Max. forward impulse current: 3420A
- Modular: IGBT
- Module type: IGBT
- Mount: винтами
- Mounting: screw
- Off state voltage max.: 1.7kV
- Operating temperature: -40...150°C
- Semiconductor structure: одиночный транзистор
- Topology: single transistor