Модуль: IGBT; 198А; SEMITRANS2; 1,7кВ; винтами; Ifsm:950А Технические параметры
- Case: SEMITRANS2
- Collector current: 198A
- Electrical mounting: винтами
- Gate - emitter voltage: ±20В
- Housing: SEMITRANS2
- Manufacturer: SEMIKRON
- Max. forward impulse current: 950A
- Modular: IGBT
- Module type: IGBT
- Mount: винтами
- Mounting: screw
- Off state voltage max.: 1.7kV
- Operating temperature: -40...150°C
- Semiconductor structure: транзистор/транзистор
- Topology: полумост IGBT