Driver; bootstrap, мертвое время, генератор подкачки заряда Технические параметры
- Case: SO8
- Configuration: Half Bridge
- Contacts: 8
- Fall Time: 45ns
- Height: 5.33mm
- Housing: DIP8
- Integrated circuit type: driver
- Integrated circuits features: генератор подкачки заряда
- Kind of integrated circuit: контроллер затвора
- Length: 10.9mm
- Manufacturer: Infineon
- Mount: THT
- Mounting: SMD
- Mounting Type: Through Hole
- Number of channels: 2
- Operating Temperature Max.: 125°C
- Operating Temperature Min.: -40°C
- Output Current: 180 mA 260 mA
- Outputs: 2
- Package Type: DIP
- Packaging: Tube
- Reflow Temperature Max.: 300°C
- Rise Time: 80ns
- Supply Voltage Max.: 15.6V
- Supply Voltage Min.: 10V
- Topology: push-pull
- Type: High Side Low Side
- Voltage class: 600V
- Voltage supply: 10...16.8В DC
- Width: 7.1mm
- Мощность: 1W
