Модуль: IGBT; 27А; SEMITRANS6; 1,2кВ; Ifsm:50А; коннекторы; V: D67 Технические параметры
- Application: преобразователь частоты
- Case: SEMITRANS6
- Collector current: 27A
- Electrical mounting: коннекторы FASTON
- Gate - emitter voltage: 20V
- Housing: SEMITRANS6
- Manufacturer: SEMIKRON
- Max. forward impulse current: 50A
- Modular: IGBT
- Module type: IGBT
- Mount: винтами
- Mounting: screwed
- Off state voltage max.: 1.2kV
- Operating temperature: -40...125°C
- Semiconductor structure: транзистор/транзистор
- Topology: IGBT half-bridge x3
- Variant: D67
- Version: D67