Полумост IGBT; Urmax:1,2кВ; Ic:400А; Ifsm:1,2кА; SEMITRANS3 Технические параметры
- Collector current: 400A
- Electrical mounting: винтами
- Gate - emitter voltage: ±20В
- Housing: SEMITRANS3
- Manufacturer: SEMIKRON
- Max. forward impulse current: 1.2kA
- Modular: IGBT
- Module type: IGBT
- Mount: винтами
- Mounting: screw
- Off state voltage max.: 1.2kV
- Operating temperature: -40...125°C
- Package: SEMITRANS3
- Semiconductor structure: транзистор/транзистор
- Topology: полумост IGBT