Infineon FF150R12RT4HOSA1 Модуль IGBT Технические параметры
- Accessory Product Type: Tray
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1.75V
- Collector-Emitter Voltage (Vceo): 1.2kV
- Configuration: Dual
- Continuous Collector Current (Ic): 150A
- Emitter Leakage Current: 100nA
- Manufacturer: Infineon
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -40°C
- Power Dissipation (Pd): 790W
- Transistor Polarity: N-Channel
