Модуль: IGBT; одиночный транзистор; Urmax: 1,2кВ; Ic: 700А; D4 Технические параметры
- Application: motors
- Case: D4
- Collector current: 700A
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 1.8kA
- Semiconductor structure: single transistor
- Technology: Trench