Модуль: IGBT; диод/транзистор; 3-уровневый однофазный инвертор Технические параметры
- Application: photovoltaics
- Case: SP6C
- Collector current: 240A
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 400A
- Semiconductor structure: diode/transistor
- Technology: Trench
- Topology: three-level inverter; single-phase