Модуль: IGBT; транзистор/транзистор,общий эмиттер; IGBT x6; SP6P Технические параметры
- Case: SP6P
- Collector current: 120A
- Electrical mounting: Press-in PCB
- Gate - emitter voltage: ±20V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 200A
- Semiconductor structure: transistor/transistor
- Technology: Trench
- Topology: NTC thermistor