Модуль: IGBT; одиночный транзистор; Urmax: 1,2кВ; Ic: 70А; SOT227B Технические параметры
- Case: SOT227B
- Collector current: 70A
- Electrical mounting: screw
- Gate - emitter voltage: ±30V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 280A
- Semiconductor structure: single transistor
- Technology: Ultra Fast NPT-IGBT®