Модуль: IGBT; диод/транзистор; boost chopper; Urmax: 1,2кВ; Ic: 50А Технические параметры
- Application: motors
- Case: SOT227B
- Collector current: 50A
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 100A
- Semiconductor structure: diode/transistor
- Technology: Trench
- Topology: boost chopper