Модуль: IGBT; одиночный транзистор; Urmax: 600В; Ic: 100А; SOT227B Технические параметры
- Case: SOT227B
- Collector current: 100A
- Electrical mounting: screw
- Gate - emitter voltage: ±30V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 600V
- Pulsed collector current: 600A
- Semiconductor structure: single transistor
- Technology: Thunderblot IGBT®