Транзистор: МОП n-канальный; полевой; 600В; 10А; 115Вт; TO220 Технические параметры
- Case: TO220
- Continuous Drain Current (Id): 10A
- Drain current: 10A
- Drain-source voltage: 600V
- Drain-Source Voltage (Vds): 600V
- Fall Time: 30ns
- Gate-Source Voltage: 30V
- Height Units: 3
- Housing: TO220
- Manufacturer: STM
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 650mΩ
- On-State Resistance: 750MΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220AB
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 115W
- Rise Time: 20ns
- Transistor Polarity: N-Channel
- Transistor type: МОП n-канальный
- Turn-OFF Delay Time: 55ns
- Turn-ON Delay Time: 20ns
- Мощность: 115W
- Сопротивление в открытом состоянии: 750mΩ
- Ток стока: 10A