Транзистор: N-MOSFET Семейство Силовые МОП-транзисторы N-канальные Технические параметры
- Continuous Drain Current (Id): 2.4A
- Drain-Source Voltage (Vds): 600V
- Fall Time: 14ns
- Gate-Source Voltage: 30V
- Height Units: 3
- Manufacturer: STM
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 3.2Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-251
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 45W
- Rise Time: 14ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 19ns
- Turn-ON Delay Time: 9ns
