Транзистор: N-MOSFET; полевой; 60В; 35А; 30Вт; TO220FP Технические параметры
- Case: TO220FP
- Continuous Drain Current (Id): 50A
- Drain current: 35A
- Drain-source voltage: 60V
- Drain-Source Voltage (Vds): 60V
- Fall Time: 15ns
- Features of semiconductor devices: ESD protected gate
- Gate-Source Voltage: 20V
- Gate-source voltage: ±20V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 15mΩ
- On-State Resistance: 18mΩ
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220FP
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 30W
- Power Dissipation (Pd): 30W
- Rise Time: 50ns
- Technology: SuperMesh™
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 36ns
- Turn-ON Delay Time: 20ns
- Type of transistor: N-MOSFET
