Транзистор: N-MOSFET; полевой; 60В; 25А; 70Вт; DPAK Технические параметры
- Case: DPAK
- Continuous Drain Current (Id): 35A
- Drain current: 25A
- Drain-source voltage: 60V
- Drain-Source Voltage (Vds): 60V
- Fall Time: 25ns
- Features of semiconductor devices: ESD protected gate
- Gate-Source Voltage: 20V
- Gate-source voltage: ±20V
- Height Units: 3
- Kind of package: tape
- Manufacturer: STM
- Mounting: SMD
- Mounting Type: SMD
- ON Resistance (Rds(on)): 30mΩ
- On-State Resistance: 28mΩ
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: TO-252
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 70W
- Power Dissipation (Pd): 70W
- Rise Time: 105ns
- Technology: SuperMesh™
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 65ns
- Turn-ON Delay Time: 30ns
- Type of transistor: N-MOSFET
