Транзистор: N-MOSFET; полевой; 600В; 3,8А; 110Вт; TO220FP Технические параметры
- Case: TO220FP
- Continuous Drain Current (Id): 6A
- Drain current: 3.8A
- Drain-source voltage: 600V
- Drain-Source Voltage (Vds): 600V
- Fall Time: 19ns
- Features of semiconductor devices: ESD protected gate
- Gate-Source Voltage: 30V
- Gate-source voltage: ±30V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 1Ω
- On-State Resistance: 1200mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220FP
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 110W
- Power Dissipation (Pd): 30W
- Rise Time: 14ns
- Technology: SuperMesh™
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 47ns
- Turn-ON Delay Time: 14ns
- Type of transistor: N-MOSFET
