Транзистор: N-MOSFET; полевой; 600В; 20А; 192Вт; TO220FP Технические параметры
- Case: TO220FP
- Continuous Drain Current (Id): 20A
- Drain current: 20A
- Drain-source voltage: 600V
- Drain-Source Voltage (Vds): 600V
- Fall Time: 11ns
- Gate-Source Voltage: 30V
- Gate-source voltage: ±30V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 250mΩ
- On-State Resistance: 290mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Package Type: TO-220FP
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 192W
- Power Dissipation (Pd): 45W
- Rise Time: 20ns
- Technology: MDmesh™
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 42ns
- Turn-ON Delay Time: 25ns
- Type of transistor: N-MOSFET
