Транзистор: МОП n-канальный; полевой; 550В; 12А; 35Вт; TO220FP Технические параметры
- Case: TO220FP
- Continuous Drain Current (Id): 12A
- Drain current: 12A
- Drain-source voltage: 550V
- Drain-Source Voltage (Vds): 500V
- Gate-Source Voltage: 30V
- Height Units: 3
- Housing: TO220FP
- Manufacturer: STM
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 300mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Package Type: TO-220FP
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 35W
- Rise Time: 10ns
- Transistor Polarity: N-Channel
- Transistor type: МОП n-канальный
- Turn-ON Delay Time: 20ns
- Мощность: 35W
- Ток стока: 12A