Транзистор: P-MOSFET; полевой; -20В; -330мА; Idm: -6А; 270мВт Технические параметры
- Case: SOT523
- Channel kind: enhanced
- Drain current: -0.33A
- Drain-source voltage: -20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±6V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.7Ω
- Polarisation: unipolar
- Power dissipation: 0.27W
- Pulsed drain current: -6A
- Type of transistor: P-MOSFET