Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 38A
- Drain-source voltage: 800V
- Gate charge: 195нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 220mΩ
- Polarisation: unipolar
- Power dissipation: 694W
- Pulsed drain current: 152A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET