Транзистор: N-MOSFET; 250В; 50А; 400Вт; TO3P; 166нс Технические параметры
- Case: TO3P
- Channel kind: enhanced
- Drain current: 50A
- Drain-source voltage: 250V
- Features of semiconductor devices: thrench gate power mosfet
- Gate charge: 78нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 0.05Ω
- Power dissipation: 400W
- Reverse recovery time: 166ns
- Type of transistor: N-MOSFET